Al2O3/GaN界面の制御とMOSゲート高電子移動度トランジスタへの応用

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DOI[10.14943/doctoral.k14586]to the data of the same series

Al2O3/GaN界面の制御とMOSゲート高電子移動度トランジスタへの応用

Persistent ID (NDL): info:ndljp/pid/11679006

Material type: 博士論文

Author: 金木, 奨太

Publisher: Hokkaido University

Publication date: 2021-03-25

Material Format: Digital

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Name of awarding university/degree: 北海道大学,博士(工学)

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Note (General)：: (主査) 教授葛西誠也, 教授本久順一, 准教授佐藤威友情報科学研究科(情報エレクトロニクス専攻)

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Material Type: 博士論文
Title: Al2O3/GaN界面の制御とMOSゲート高電子移動度トランジスタへの応用
Author/Editor: 金木, 奨太
Author Heading: 金木, 奨太
Publication, Distribution, etc.: Hokkaido University
Publication Date: 2021-03-25
Publication Date (W3CDTF): 2021-03-25
Alternative Title: Interface Control of Al2O3/GaN Structures for MOS-gate High Electron Mobility Transistors
Contributor: 葛西, 誠也
本久, 順一
佐藤, 威友
Degree grantor/type: 北海道大学
Date Granted: 2021-03-25
Date Granted (W3CDTF): 2021-03-25
Dissertation Number: 甲第14586号
Degree Type: 博士(工学)
Conferring No. (Dissertation): 甲第14586号
Text Language Code: jpn
NDC: 500
Target Audience: 一般
Note (General): (主査) 教授葛西誠也, 教授本久順一, 准教授佐藤威友
情報科学研究科(情報エレクトロニクス専攻)
DOI: 10.14943/doctoral.k14586
https://doi.org/10.14943/doctoral.k14586
Persistent ID (NDL): info:ndljp/pid/11679006
https://dl.ndl.go.jp/pid/11679006
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
https://dl.ndl.go.jp/collections/A00014
Acquisition Basis: 博士論文（自動収集）
Date Accepted (W3CDTF): 2021-06-07T02:06:26+09:00
Date Created (W3CDTF): 2021
Format (IMT): PDF
Access Restrictions: 国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service: 図書館・個人送信対象外
Availability of remote photoduplication service: 可
Periodical Title (URI): http://dx.doi.org/10.14943/doctoral.k14586
http://hdl.handle.net/2115/81293
Is Referenced By (URI): http://hdl.handle.net/2115/81267
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp