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ゲート絶縁膜中フッ素添加によるa-InGaZnO薄膜素子における高信頼性化機構の解析
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国立国会図書館デジタルコレクション
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DOI[10.34413/dr.01348]to the data of the same series
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- Material Type
- 博士論文
- Title Transcription
- ゲート ゼツエンマクチュウ フッソ テンカ ニ ヨル a-InGaZnO ハクマク ソシ ニ オケル コウシンライ セイカ キコウ ノ カイセキ
- Author/Editor
- 山﨑, はるか
- Author Heading
- Publication, Distribution, etc.
- Publication Date
- 2016-03-24
- Publication Date (W3CDTF)
- 2016-03-24
- Alternative Title
- Effects of Fluorine Addition in Gate Insulator Toward Highly-reliable Amorphous InGaZnO Thin Film Devises.
- Degree grantor/type
- 奈良先端科学技術大学院大学