博士論文

Epitaxial Growth of Ge Layer with Low Threading Dislocation Density on Si Substrate for Light-Emitting Device Applications

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DOI[10.15083/0002002007]to the data of the same series

Epitaxial Growth of Ge Layer with Low Threading Dislocation Density on Si Substrate for Light-Emitting Device Applications

Persistent ID (NDL)
info:ndljp/pid/11864347
Material type
博士論文
Author
八子, 基樹
Publisher
-
Publication date
2019-03-25
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京大学,博士(工学)
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学位の種別: 課程博士審査委員会委員 : （主査）東京大学教授 森田 一樹, 東京大学教授 鳥海 明, 東京大学教授 近藤 高志, 東京大学教授 阿部 英司, 豊橋技術科学大学教授 石川 靖彦

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  • https://repository.dl.itc.u-tokyo.ac.jp/record/2002007/files/A35855_review.pdf other

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  • https://repository.dl.itc.u-tokyo.ac.jp/record/2002007/files/A35855_abstract.pdf abstract

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Digital

Material Type
博士論文
Title
Epitaxial Growth of Ge Layer with Low Threading Dislocation Density on Si Substrate for Light-Emitting Device Applications
Author/Editor
八子, 基樹
Author Heading
八子, 基樹
Publication Date
2019-03-25
Publication Date (W3CDTF)
2019-03-25
Alternative Title
発光素子応用に向けたSi基板上低貫通転位密度Ge層のエピタキシャル成長
Degree grantor/type
東京大学
Date Granted
2019-03-25
Date Granted (W3CDTF)
2019-03-25