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博士論文

先端半導体デバイス用プラズマ支援原子層エッチングの表面反応機構

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先端半導体デバイス用プラズマ支援原子層エッチングの表面反応機構

Persistent ID (NDL)
info:ndljp/pid/11976915
Material type
博士論文
Author
平田, 瑛子
Publisher
-
Date granted
2021-09-24
Material Format
Digital
Capacity, size, etc.
-
Degree grantor and degree
大阪大学,博士(工学)
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Table of Contents

Provided by:国立国会図書館デジタルコレクションLink to Help Page
  • 2022-11-07 再収集

  • 2022-11-07 再収集

  • 2023-09-08 再収集

  • 2023-09-08 再収集

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Digital

Material Type
博士論文
Title Transcription
センタンハンドウタイデバイスヨウプラズマシエンゲンシソウエッチングノヒョウメンハンノウキコウ
Author/Editor
平田, 瑛子
Author Heading
Publication Date
2021-09-24
Publication Date (W3CDTF)
2021-09-24
Alternative Title
Surface reaction mechanisms of plasma-assisted atomic layer etching for advanced semiconductor devices
Degree Grantor
大阪大学
Date Granted
2021-09-24