博士論文

Study of AlGaN/GaN HEMTs on 3C-SiC/LR-Si by introducing a thick nitride layerfor RF applications

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Study of AlGaN/GaN HEMTs on 3C-SiC/LR-Si by introducing a thick nitride layerfor RF applications

Persistent ID (NDL)
info:ndljp/pid/12303118
Material type
博士論文
Author
Arijit, Bose
Publisher
-
Publication date
2022-03-31
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
名古屋工業大学,博士(工学)
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Note (General)：

主査：分島　彰男

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  • 2023-12-06 再収集

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Digital

Material Type
博士論文
Title
Study of AlGaN/GaN HEMTs on 3C-SiC/LR-Si by introducing a thick nitride layerfor RF applications
Author/Editor
Arijit, Bose
Author Heading
Arijit, Bose
Publication Date
2022-03-31
Publication Date (W3CDTF)
2022-03-31
Alternative Title
厚いGaN層を有する3C-SiC/LR-Si上AlGaN/GaN HEMTsのRF応用に向けた研究
Degree grantor/type
名古屋工業大学
Date Granted
2022-03-31
Date Granted (W3CDTF)
2022-03-31