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博士論文

大電力用半導体デバイスの宇宙線故障率計算手法

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大電力用半導体デバイスの宇宙線故障率計算手法

Persistent ID (NDL)
info:ndljp/pid/12303865
Material type
博士論文
Author
Gollapudi, Srikanth
Publisher
-
Publication date
2022-03-25
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
九州工業大学,博士(工学)
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Notes on use

Note (General):

九州工業大学博士学位論文 学位記番号: 生工博甲第428号 学位授与年月日: 令和4年3月25日令和3年度

Detailed bibliographic record

Summary, etc.:

Power semiconductor devices are susceptible to catastrophic failures when exposed to energetic particles present in cosmic radiation. The most serious...

Table of Contents

Provided by:国立国会図書館デジタルコレクションLink to Help Page
  • 2023-08-05 再収集

  • 2023-10-11 再収集

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Digital

Material Type
博士論文
Author/Editor
Gollapudi, Srikanth
Author Heading
Publication Date
2022-03-25
Publication Date (W3CDTF)
2022-03-25
Alternative Title
A universal failure rate calculation method for single event burnout in high power semiconductor devices
Contributor
大村, 一郎
Degree grantor/type
九州工業大学
Date Granted
2022-03-25