SiO2/GaN MOS構造の界面特性評価および高圧水蒸気処理による欠陥の低減

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DOI[10.34413/dr.01784]to the data of the same series

SiO2/GaN MOS構造の界面特性評価および高圧水蒸気処理による欠陥の低減

Persistent ID (NDL): info:ndljp/pid/12886420

Material type: 博士論文

Author: 古川, 暢昭

Publisher: 奈良先端科学技術大学院大学

Publication date: 2021-03-31

Material Format: Digital

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Name of awarding university/degree: 奈良先端科学技術大学院大学,博士(工学)

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Material Type: 博士論文
Title: SiO2/GaN MOS構造の界面特性評価および高圧水蒸気処理による欠陥の低減
Title Transcription: SiO 2 / GaN MOS コウゾウノカイメントクセイヒョウカオヨビコウアツスイジョウキショリニヨルケッカンノテイゲン
Author/Editor: 古川, 暢昭
Author Heading: 古川, 暢昭
Publication, Distribution, etc.: 奈良先端科学技術大学院大学
Publication Date: 2021-03-31
Publication Date (W3CDTF): 2021-03-31
Alternative Title: Interface properties of SiO2/GaN metal-oxide-semiconductor structure and reduction of defects by high pressure water vapor annealing
Degree grantor/type: 奈良先端科学技術大学院大学
Date Granted: 2021-03-31
Date Granted (W3CDTF): 2021-03-31
Dissertation Number: 甲第1784号
Degree Type: 博士(工学)
Text Language Code: jpn
Subject Heading: 高圧水蒸気処理
GaN
MOS
Target Audience: 一般
DOI: 10.34413/dr.01784
https://doi.org/10.34413/dr.01784
Persistent ID (NDL): info:ndljp/pid/12886420
https://dl.ndl.go.jp/pid/12886420
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
https://dl.ndl.go.jp/collections/A00014
Acquisition Basis: 博士論文（自動収集）
Date Accepted (W3CDTF): 2023-06-02T22:06:11+09:00
Format (IMT): application/pdf
Access Restrictions: 国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service: 図書館・個人送信対象外
Availability of remote photoduplication service: 可
Periodical Title (URI): http://dx.doi.org/10.34413/dr.01784
http://hdl.handle.net/10061/14422
https://naist.repo.nii.ac.jp/records/10051
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp