博士論文

標準CMOSプロセスとの整合性と高周波特性250GHz越のSiGe HBTを有する0.18µm SiGe BiCMOSの研究

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標準CMOSプロセスとの整合性と高周波特性250GHz越のSiGe HBTを有する0.18µm SiGe BiCMOSの研究

Persistent ID (NDL)
info:ndljp/pid/13116972
Material type
博士論文
Author
橋本, 尚ほか
Publisher
-
Publication date
2023-03
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京工業大学,博士(工学)
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identifier:oai:t2r2.star.titech.ac.jp:50644885

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Digital

Material Type
博士論文
Title
標準CMOSプロセスとの整合性と高周波特性250GHz越のSiGe HBTを有する0.18µm SiGe BiCMOSの研究
Author/Editor
橋本, 尚
Hashimoto, Takashi
Author Heading
橋本, 尚
Hashimoto, Takashi
Publication Date
2023-03
Publication Date (W3CDTF)
2023-03
Alternative Title
Study on 0.18 µm SiGe BiCMOS having compatibility with standard CMOS process and SiGe HBT with high frequency characteristics over 250 GHz
Degree grantor/type
東京工業大学
Date Granted
2023-03-26
Date Granted (W3CDTF)
2023-03-26