Study on antiferroelectric ZrO₂ ultrathin films and their applications to MOSFETs

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Study on antiferroelectric ZrO₂ ultrathin films and their applications to MOSFETs

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Material Type: 博士論文
Title: Study on antiferroelectric ZrO₂ ultrathin films and their applications to MOSFETs
Author/Editor: 羅璇
Publication, Distribution, etc.: 羅璇
Publication Date: 2022
Publication Date (W3CDTF): 2022
Alternative Title: 反強誘電性ZrO₂極薄膜とそのMOSFETへの応用に関する研究
Degree Grantor: 東京大学
Date Granted: 2022-03-24
Date Granted (W3CDTF): 2022-03-24
Dissertation Number: 甲第39123号
Degree Type: 博士(工学)
Text Language Code: eng
Alias of Author: Luo Xuan
Persistent ID (NDL): info:ndljp/pid/13341804
https://dl.ndl.go.jp/pid/13341804
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
https://dl.ndl.go.jp/collections/A00014
Acquisition Basis: 博士論文（送信）
Date Accepted (W3CDTF): 2024-02-28T10:33:14+09:00
Format (IMT): application/pdf
Access Restrictions: 国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service: 図書館・個人送信対象外
Availability of remote photoduplication service: 可
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp