高誘電率Ｔａ２Ｏ５膜のシリコン半導体メモリ用容量絶縁膜への適用に関する研究

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DOI[10.15006/32665B7176]to the data of the same series

高誘電率Ｔａ２Ｏ５膜のシリコン半導体メモリ用容量絶縁膜への適用に関する研究

Persistent ID (NDL): info:ndljp/pid/13700441

Material type: 博士論文

Author: 神力,博

Publisher: -

Publication date: 2016-11-28

Material Format: Digital

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Name of awarding university/degree: 日本大学,博士（工学）

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Material Type: 博士論文
Title: 高誘電率Ｔａ２Ｏ５膜のシリコン半導体メモリ用容量絶縁膜への適用に関する研究
Author/Editor: 神力,博
Author Heading: 神力,博
Publication Date: 2016-11-28
Publication Date (W3CDTF): 2016-11-28
Alternative Title: Study on Application of Ta2O5 Dielectric Films for Storage Capacitor of Semiconductor Memories
Degree grantor/type: 日本大学
Date Granted: 2016-11-28
Date Granted (W3CDTF): 2016-11-28
Dissertation Number: 乙第7176号
Degree Type: 博士（工学）
Text Language Code: jpn
Subject Heading: 半導体
誘電体
酸化タンタル
ＤＲＡＭ
ＣＶＤ
semiconductor
dielectric
tantalum oxide
dynamic random access memory
chemical vapor deposition
Target Audience: 一般
DOI: 10.15006/32665B7176
https://doi.org/10.15006/32665B7176
Persistent ID (NDL): info:ndljp/pid/13700441
https://dl.ndl.go.jp/pid/13700441
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
https://dl.ndl.go.jp/collections/A00014
Acquisition Basis: 博士論文（自動収集）
Date Accepted (W3CDTF): 2024-06-07T22:11:43+09:00
Format (IMT): application/pdf
Access Restrictions: 国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service: 図書館・個人送信対象外
Availability of remote photoduplication service: 可
Periodical Title (URI): https://doi.org/10.15006/32665B7176
https://nihon-u.repo.nii.ac.jp/records/2000924
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp