大容量SiCパワー半導体素子に向けたエピタキシャル結晶成長技術の開発 : 低マイクロパイプ密度、厚膜・高純度4H-SiCエピタキシャル単結晶膜の形成 (電力中央研究所報告 W02018)
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国立国会図書館デジタルコレクション
Digital data available（電力中央研究所）
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Bibliographic Record
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- Material Type
- 電子書籍・電子雑誌
- Author/Editor
- 土田秀一鎌田功穂
- Series Title
- Publication, Distribution, etc.
- Publication Date
- 2003-04
- Publication Date (W3CDTF)
- 2003-04
- Alternative Title
- Development of epitaxial growth techniques for high-power SiC semiconductor devices
- Text Language Code
- jpn
- Persistent ID (NDL)
- info:ndljp/pid/13827666