Study of NAND Flash Memory Cells

• Material Type: 博士論文
• Title: Study of NAND Flash Memory Cells
• Author/Editor: 有留, 誠一
• Author Heading: 有留, 誠一
• Publication Date: 2013-09-25
• Publication Date (W3CDTF): 2013-09-25
• Alternative Title: NAND型フラッシュメモリセルの研究
• Degree grantor/type: 広島大学
• Date Granted: 2013-09-25
• Date Granted (W3CDTF): 2013-09-25
• Dissertation Number: 甲第6228号
• Degree Type: 博士(工学); Engineering
• Conferring No. (Dissertation): 甲第6228号
• Text Language Code: eng
• Alias of Author: Aritome, Seiichi
• NDC: 500
• Target Audience: 一般
• Note (General): This paper presents the device technologies of NAND Flash memory to realize low bit cost and high reliability. First, planar (two-dimensional) NAND Flash memory cells are discussed. Four types of NAND Flash memory cells of the LOCOS (LOCal Oxidation of Silicon) isolation cell, the SA-STI cell (Self-Aligned Shallow Trench Isolation cell) with FG wing, the SA-STI cell without FG wing, and SWATT cell (Side WAll Transfer Transistor cell) have been proposed and developed. By using these proposed memory cell, NAND Flash memory cell has been scaled down over 20 years to achieve small memory die size, high performance, and high reliability.……
• Persistent ID (NDL): info:ndljp/pid/8948472; https://dl.ndl.go.jp/pid/8948472
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• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文; https://dl.ndl.go.jp/collections/A00014
• Acquisition Basis: 博士論文（自動収集）
• Available (W3CDTF): 2015-03-03
• Date Accepted (W3CDTF): 2015-02-03T05:25:05+09:00
• Format (IMT): application/pdf
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• Periodical Title (URI): http://ir.lib.hiroshima-u.ac.jp/00035129
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2018-12-03 再収集

2018-12-03 再収集