Development of device isolation technologies for GaN-based field-effect transistors

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Development of device isolation technologies for GaN-based field-effect transistors

Persistent ID (NDL): info:ndljp/pid/9901914

Material type: 博士論文

Author: Jiang, Ying

Publisher: -

Publication date: 2015-09-10

Material Format: Digital

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Name of awarding university/degree: 徳島大学,博士（工学）

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Material Type: 博士論文
Title: Development of device isolation technologies for GaN-based field-effect transistors
Author/Editor: Jiang, Ying
Author Heading: Jiang, Ying
Publication Date: 2015-09-10
Publication Date (W3CDTF): 2015-09-10
Alternative Title: 窒化ガリウムトランジスタにおける素子間分離技術の研究
Degree grantor/type: 徳島大学
Date Granted: 2015-09-10
Date Granted (W3CDTF): 2015-09-10
Dissertation Number: 甲第2875号
Degree Type: 博士（工学）
Conferring No. (Dissertation): 甲第2875号
Text Language Code: eng
Subject Heading: Gallium nitride
device isolation
field isolation
AlGaN/GaN HFET
GaN MOSFET
Target Audience: 一般
Persistent ID (NDL): info:ndljp/pid/9901914
https://dl.ndl.go.jp/pid/9901914
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 博士論文
https://dl.ndl.go.jp/collections/A00014
Acquisition Basis: 博士論文（自動収集）
Date Accepted (W3CDTF): 2016-03-01T12:53:35+09:00
Format (IMT): application/pdf
Access Restrictions: 国立国会図書館内限定公開
Service for the Digitized Contents Transmission Service: 図書館・個人送信対象外
Availability of remote photoduplication service: 可
Periodical Title (URI): http://repo.lib.tokushima-u.ac.jp/109494
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp