光励起CVD法によるPZT系強誘電体薄膜の作製とメモリデバイスへの応用

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Material Type: 図書
Title: 光励起CVD法によるPZT系強誘電体薄膜の作製とメモリデバイスへの応用
Title Transcription: ヒカリレイキ CVDホウニヨル PZTケイキョウユウデンタイハクマクノサクセイトメモリデバイスエノオウヨウ
Author/Editor: 塩嵜忠研究代表
Author Heading: 塩崎, 忠シオサキ, タダシ
https://ci.nii.ac.jp/author/DA00474049
京都大学大学院工学研究科キョウトダイガクダイガクインコウガクケンキュウカ
https://ci.nii.ac.jp/author/DA12826609
Publication, Distribution, etc.: [塩嵜忠]
Publication Date: 1994.3
Publication Date (W3CDTF): 1994
Size: 30cm
Alternative Title: 平成5年度科学研究費補助金(一般研究(B))研究成果報告書 : 04452176
Place of Publication (Country Code): ja
Text Language Code: ja
Target Audience: 一般
Note (General): 京都大学工学部
Related Material (URI): https://ci.nii.ac.jp/ncid/BA73858238#entity
Data Provider (Database): 国立情報学研究所 : CiNii Research
Original Data Provider (Database): CiNii Books
https://ci.nii.ac.jp/books
NCID: https://ci.nii.ac.jp/ncid/BA73858238 : BA73858238