On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge

• Material Type: 記事
• Title: On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge
• Author Heading: Kin-ichi Masuda; Kenichi Kojima; Toshiharu Hoshino
• Publication Date: 1983-08-01
• Publication Date (W3CDTF): 1983-08-01
• Periodical title: Japanese Journal of Applied Physics
• No. or year of volume/issue: 22 8R
• Volume: 22
• Issue: 8R
• Pages: 1240-
• Publication date of volume/issue (W3CDTF): 1983-08-01
• ISSN (Periodical Title): 00214922
• Publication (Periodical Title): IOP Publishing
• Subject Heading: General Physics and Astronomy; General Engineering
• Target Audience: 一般
• DOI: 10.1143/jjap.22.1240
• Date Created (W3CDTF): 2005-11-04
• Rights (production): https://iopscience.iop.org/page/copyright; https://iopscience.iop.org/info/page/text-and-data-mining
• Related Material (URI): https://iopscience.iop.org/article/10.1143/JJAP.22.1240; https://iopscience.iop.org/article/10.1143/JJAP.22.1240/pdf
• Is Referenced By: Effects of External Shear Stress on the Smallest Double Kink Nucleation Process in Si; https://cir.nii.ac.jp/crid/1390001204186131712
• References: Simplified LCAO Method for the Periodic Potential Problem; https://cir.nii.ac.jp/crid/1360011144687636096; Anisotropic conductivity of CdS after plastic deformation and conduction along dislocations: II. Measurements on a microscopic scale; https://cir.nii.ac.jp/crid/1360011145514188928; Electron states associated with the core region of the 60° dislocation in silicon and germanium; https://cir.nii.ac.jp/crid/1360016870457001216; A tight-binding derivation of force constants : Application to covalent systems; https://cir.nii.ac.jp/crid/1360292620930559360; Motion of extended dislocations in silicon crystals observed by HVEM; https://cir.nii.ac.jp/crid/1360298342914685184; Étude des systèmes covalents parfaits et imparfaits par deux méthodes d'approximation; https://cir.nii.ac.jp/crid/1360574094325961856; Stacking fault energy and ionicity of cubic III–V compounds; https://cir.nii.ac.jp/crid/1360574095478221824; Electronic states associated with the 60° edge dislocation in silicon; https://cir.nii.ac.jp/crid/1360579820315150976; Angular dependence of electron-energy-loss spectroscopy: Application to diamond; https://cir.nii.ac.jp/crid/1360861293993999232; Realistic Tight-Binding Calculations of Surface States of Si and Ge (111); https://cir.nii.ac.jp/crid/1361137043751685632; Electron states associated with partial dislocations in silicon; https://cir.nii.ac.jp/crid/1361137044758665728; Dissociation of near-screw dislocations in germanium and silicon; https://cir.nii.ac.jp/crid/1361137046340353280; Investigations of dislocation strain fields using weak beams; https://cir.nii.ac.jp/crid/1361418518406225920; Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors; https://cir.nii.ac.jp/crid/1361418518650488832; Velocities of Individual Dislocations in Germanium; https://cir.nii.ac.jp/crid/1361418521091776768; Bond-Orbital Model and the Properties of Tetrahedrally Coordinated Solids; https://cir.nii.ac.jp/crid/1361699994821474816; On the Core Structure of the Glide‐Set 90° and 30° Partial Dislocations in Silicon; https://cir.nii.ac.jp/crid/1361981470572319104; On the mobility of partial dislocations in silicon; https://cir.nii.ac.jp/crid/1362262944646279552; Electronic theory for screw dislocation in b.c.c. transition metals; https://cir.nii.ac.jp/crid/1362544419097623168; Velocities of Screw and 60°‐Dislocations in Silicon; https://cir.nii.ac.jp/crid/1362544419200344704; 30° Partial Dislocations in Silicon: Absence of Electrically Active States; https://cir.nii.ac.jp/crid/1362544419260147072; <i>In situ X-ray</i>topographic studies of the generation and the multiplication processes of dislocations in silicon crystals at elevated temperatures; https://cir.nii.ac.jp/crid/1362544419617407488; Electronic states associated with the sixty-degree edge dislocation in germanium; https://cir.nii.ac.jp/crid/1362825893875033600; Screw-dislocation motion in b.c.c. transition metals model calculation using a tight-binding-type electronic theory; https://cir.nii.ac.jp/crid/1363388843474964352; Electronic structure of the unreconstructed 30° partial dislocation in silicon; https://cir.nii.ac.jp/crid/1363670318973370880; Constrictions in the stacking faults of dislocations in germanium; https://cir.nii.ac.jp/crid/1363670320996416768; The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion; https://cir.nii.ac.jp/crid/1363951795138023040
• Data Provider (Database): 国立情報学研究所 : CiNii Research
• Original Data Provider (Database): Crossref; https://www.crossref.org; CiNii Articles
• NAID: 210000022385

• Summary, etc.: <jats:p> We use a tight-binding (TB) type electronic theory to calculate the core structure and core energy of both screw and 60° dislocations in th...