Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

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Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD

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Material Type: 記事
Title: Heavy atomic-layer doping of nitrogen in Si1−Ge film epitaxially grown on Si(100) by ultraclean low-pressure CVD
Author Heading: Tomoyuki Kawashima
Masao Sakuraba
Bernd Tillack
Junichi Murota
Publication Date: 2010-01
Publication Date (W3CDTF): 2010-01
Periodical title: Thin Solid Films
No. or year of volume/issue: 518 6
Volume: 518
Issue: 6
Pages: S62-S64
Publication date of volume/issue (W3CDTF): 2010-01
ISSN (Periodical Title): 00406090
Publication (Periodical Title): Elsevier BV
Target Audience: 一般
DOI: 10.1016/j.tsf.2009.10.056
Date Created (W3CDTF): 2009-10-21
Rights (production): https://www.elsevier.com/tdm/userlicense/1.0/
Related Material (URI): https://api.elsevier.com/content/article/PII:S004060900901699X?httpAccept=text/xml
https://api.elsevier.com/content/article/PII:S004060900901699X?httpAccept=text/plain
Is Referenced By: Behavior of N atoms after thermal nitridation of Si1−xGex surface
https://cir.nii.ac.jp/crid/1360283691164232960
Data Provider (Database): 国立情報学研究所 : CiNii Research
Original Data Provider (Database): Crossref
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