yr 〜
yr

Search results 3

Preparation of InGaAs starting materials with the gradient InAs concentration

Preparation of InGaAs starting materials with the gradient InAs concentration
Digital文書・図像類
橋尾, 克司, 龍見, 雅美, 加藤, 浩和, 木下, 恭一, Hashio, Katsushi, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi宇宙開発事業団1999-09-30宇宙開発事業団技術報告 = NASDA Technical Memorandump.51-56
Other Libraries in Japan
  • Subject Heading...wth nucleation growth interface
  • Note (General)...40 K/cm at the growth interface, the constitut......n front of the growth interface, where nucleation and growth ...

Preparation of InGaAs starting materials having the gradient InAs concentration

Preparation of InGaAs starting materials having the gradient InAs concentration
Digital文書・図像類
龍見, 雅美, 加藤, 浩和, 木下, 恭一, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.55-59
Other Libraries in Japan
  • Subject Heading...ing nucleation growth interface fluorescent X ray method micr...
  • Note (General)...cur ahead of a growth interface and a new growth interface is formed. 資料番号: AA0029300006...

In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method

In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method
Digital文書・図像類
児玉, 茂夫, 古村, 雄二, 木下, 恭一, 加藤, 浩和, 依田, 真一, Kodama, Shigeo, Furumura, Yuji, Kinoshita, Kyoichi, Kato, Hirokazu, Yoda, Shinichi宇宙開発事業団1999-09-30宇宙開発事業団技術報告 = NASDA Technical Memorandump.57-60
Other Libraries in Japan
  • Subject Heading...As composition growth interface growth temperature traveling ...
  • Note (General)...at the initial growth interface to 0.33 by decreasing the gro...

Reached to the end of result.