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Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer

Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer
Digital博士論文障害者向け資料あり
蒲, 涛飞2019-03-06
National Diet Library
  • Subject HeadingAlGaN/GaN heterostructure normally-off blocking layer gate-first metal-insulator-semiconductor

AlGaN/GaNヘテロ接合電界効果トランジスタの特性改善に向けた界面電荷制御

AlGaN/GaNヘテロ接合電界効果トランジスタの特性改善に向けた界面電荷制御
Digital博士論文
中澤, 敏志Kyoto University2019-09-24
Available onlineOther Libraries in Japan
  • Subject Heading...ct Transistors Metal-Insulator-Semiconductor gate High frequency

Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer

Study on Normally-off AlGaN/GaN Heterostructure Field-Effect Transistors with P-GaN Cap Layer
Digital博士論文
蒲, 涛飞2019-03-06
Available onlineOther Libraries in Japan
  • Subject HeadingAlGaN/GaN heterostructure normally-off blocking layer gate-first metal-insulator-semiconductor

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