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In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method

In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method
Digital文書・図像類
児玉, 茂夫, 古村, 雄二, 木下, 恭一, 加藤, 浩和, 依田, 真一, Kodama, Shigeo, Furumura, Yuji, Kinoshita, Kyoichi, Kato, Hirokazu, Yoda, Shinichi宇宙開発事業団1999-09-30宇宙開発事業団技術報告 = NASDA Technical Memorandump.57-60
Other Libraries in Japan
  • Subject Heading...a seed crystal multi component zone melting virtical gradient freeze InAs...

Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As

Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As
Digital文書・図像類
中村, 裕彦, 加藤, 浩和, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Kato, Hirokazu, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.15-28
Other Libraries in Japan
  • Subject Heading...s microgravity multi component zone melting method mixed crystal quantita...

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals
Digital文書・図像類
宇宙開発事業団, Natl. Space Development Agency of Japan宇宙開発事業団2000-09-29NASDA Technical Memorandump.1-86
Other Libraries in Japan
  • Subject Heading...iquid reaction multi component zone melting method mixed crystal InAs GaA...

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