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Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition SAND980112C DE98 007119 CONF980576

Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition SAND980112C DE98 007119 CONF980576
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Allerman, A. A, Kurtz, S. R, Baucom, K. C1998<LS-DE98/007119>
国立国会図書館

Growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters SAND-96-2618C DE97 007595 CONF-9704361

Growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters SAND-96-2618C DE97 007595 CONF-9704361
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Allerman, A. A, Kurtz, S. R1997<LS-DE97/007595>
国立国会図書館

Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition SAND-97-1477C DE98 002575

Recent Progress in the Growth of Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition SAND-97-1477C DE98 002575
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Allerman, A. A, Kurtz, S. R, Baucom, K. C1998<LS-DE98/002575>
国立国会図書館

Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire SAND-97-1830C DE98 002573

Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire SAND-97-1830C DE98 002573
マイクロ規格・テクニカルリポート類
Ng, T. B, Han, J, Biefeld, R. M, Zolper, J. C, Crawford, M. H1998<LS-DE98/002573>
国立国会図書館

Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy SAND981035C DE98 005465 CONF980604

Atomic-scale properties of semiconductor heterostructures probed by scanning tunneling microscopy SAND981035C DE98 005465 CONF980604
マイクロ規格・テクニカルリポート類
Yu, E. T, Zuo, S. L, Bi, W. G, Tu, C. W, Biefeld, R. M1998<LS-DE98/005465>
国立国会図書館

Development of InAsSb-based light emitting diodes for chemical sensing systems SAND980459C DE98 004134

Development of InAsSb-based light emitting diodes for chemical sensing systems SAND980459C DE98 004134
マイクロ規格・テクニカルリポート類
Allerman, A. A, Kurtz, S. R, Biefeld, R. M, Baucom, K. C, Burkhart, J. H1998<LS-DE98/004134>
国立国会図書館

Use of high index substrates to enable dislocation filtering in large mismatch systems SAND-97-0023 DE97 002708

Use of high index substrates to enable dislocation filtering in large mismatch systems SAND-97-0023 DE97 002708
マイクロ規格・テクニカルリポート類
Reno, J. L, Biefeld, R. M, Kurtz, S. R, Baucom, K. C1997<LS-DE97/002708>
国立国会図書館

Growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition SAND-97-2166C DE98 000048 CONF-9709471

Growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition SAND-97-2166C DE98 000048 CONF-9709471
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Allerman, A. A, Kurtz, S. R, Burkhart, J. H1997<LS-DE98/000048>
国立国会図書館

Multi-staged, InAsSb mid-infrared lasers and light-emitting diodes, grown by MOCVD SAND-97-2237C DE97 009385 CONF-970887

Multi-staged, InAsSb mid-infrared lasers and light-emitting diodes, grown by MOCVD SAND-97-2237C DE97 009385 CONF-970887
マイクロ規格・テクニカルリポート類
Kurtz, S. R, Allerman, A. A, Biefeld, R. M, Baucom, K. C1997<LS-DE97/009385>
国立国会図書館

Growth and doping of Al(As)Sb by metal-organic chemical vapor deposition SAND-96-1052C DE96 010848 CONF-96040128

Growth and doping of Al(As)Sb by metal-organic chemical vapor deposition SAND-96-1052C DE96 010848 CONF-96040128
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Allerman, A. A, Kurtz, S. R1996<LS-DE96/010848>
国立国会図書館

Preparation of AlAsSb and mid-infrared (3-5 (mu)m) lasers by metal-organic chemical vapor deposition SAND-96-1699C DE97 006878 CONF-961202122

Preparation of AlAsSb and mid-infrared (3-5 (mu)m) lasers by metal-organic chemical vapor deposition SAND-96-1699C DE97 006878 CONF-961202122
マイクロ規格・テクニカルリポート類
Allerman, A. A, Biefeld, R. M, Kurtz, S. R1996<LS-DE97/006878>
国立国会図書館

Novel materials and device design by metal-organic chemical vapor deposition for use in infrared emitters SAND-96-1213C DE97 001233 CONF-96092861

Novel materials and device design by metal-organic chemical vapor deposition for use in infrared emitters SAND-96-1213C DE97 001233 CONF-96092861
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Kurtz, S. R, Allerman, A. A1996<LS-DE97/001233>
国立国会図書館

Heterostructures and infrared emitters with compressed InAsSb layers SAND-94-2478C DE95 008157 CONF-9501671

Heterostructures and infrared emitters with compressed InAsSb layers SAND-94-2478C DE95 008157 CONF-9501671
マイクロ規格・テクニカルリポート類
Kurtz, S. R, Biefeld, R. M1995<LS-DE95/008157>
国立国会図書館

Growth and optimization of InPSb/InGaAs/InAsSb strained-layer superlattice emitters by metal organic chemical vapor deposition SAND-94-2758C DE95 011057 CONF-9504121

Growth and optimization of InPSb/InGaAs/InAsSb strained-layer superlattice emitters by metal organic chemical vapor deposition SAND-94-2758C DE95 011057 CONF-9504121
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Kurtz, S. R1995<LS-DE95/011057>
国立国会図書館

Ordering and bandgap reduction in InAs1-xSbx alloys SAND-94-2288C DE95 006324 CONF-9501672

Ordering and bandgap reduction in InAs1-xSbx alloys SAND-94-2288C DE95 006324 CONF-9501672
マイクロ規格・テクニカルリポート類
Follstaedt, D. M, Biefeld, R. M, Kurtz, S. R, Dawson, L. R, Baucom, K. C1995<LS-DE95/006324>
国立国会図書館

Photoluminescence determination of valence-band symmetry and Auger-1 threshold energy in biaxially compressed InAsSb layers SAND-94-0892C DE94 017408 CONF-9409812

Photoluminescence determination of valence-band symmetry and Auger-1 threshold energy in biaxially compressed InAsSb layers SAND-94-0892C DE94 017408 CONF-9409812
マイクロ規格・テクニカルリポート類
Kurtz, S. R, Biefeld, R. M, Dawson, L. R1994<LS-DE94/017408>
国立国会図書館

Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters SAND-94-2292C DE95 006323 CONF-9501673

Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters SAND-94-2292C DE95 006323 CONF-9501673
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Follstaedt, D. M, Kurtz, S. R, Baucom, K. C1995<LS-DE95/006323>
国立国会図書館

Microstructures of InAs(1-x)Sb(x) (x = 0.07--0.14) alloys and strained-layer superlattices SAND-94-0506C DE94 015801 CONF-9406161

Microstructures of InAs(1-x)Sb(x) (x = 0.07--0.14) alloys and strained-layer superlattices SAND-94-0506C DE94 015801 CONF-9406161
マイクロ規格・テクニカルリポート類
Follstaedt, D. M, Biefeld, R. M, Kurtz, S. R1994<LS-DE94/015801>
国立国会図書館

Growth and characterization of heterostructures and infrared emitters with compressed InAsSb layers SAND-95-0560 DE95 009828

Growth and characterization of heterostructures and infrared emitters with compressed InAsSb layers SAND-95-0560 DE95 009828
マイクロ規格・テクニカルリポート類
Kurtz, S. R, Biefeld, R. M, Dawson, L. R, Follstaedt, D. M, Baucom, K. C1995<LS-DE95/009828>
国立国会図書館

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters SAND-94-0864C DE94 016557 CONF-9409811

Optimization of InAsSb/InGaAs strained-layer superlattice growth by metal-organic chemical vapor deposition for use in infrared emitters SAND-94-0864C DE94 016557 CONF-9409811
マイクロ規格・テクニカルリポート類
Biefeld, R. M, Baucom, K. C, Follstaedt, D. M, Kurtz, S. R1994<LS-DE94/016557>
国立国会図書館
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