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Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates

Significance of the Suppression of Substrate Surface Nitridation for Epitaxial Growth of Wurtzite InN on GaP(111) and InP(111) Substrates
デジタル文書・図像類
BHUIYAN, Ashraful Ghani, YAMAMOTO, Akio, HASHIMOTO, Akihiro, ISHIGAMI, RyuyaThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.343-346
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  • 著者標目BHUIYAN, Ashraful Ghani YAMAMOTO, Akio HASHIMOTO, Akihiro ISHIGAMI, Ryuya

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