Verma, P., Islam, M. R., 山田, 正良, 龍見, 雅美, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.85-89
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- 件名... 対流 微小重力 ラマン散乱 成分プロファイル 均質性 In(sub x)Ga(sub 1 minus x...