前川, 透, 池上, 圭介, 田所, 丈季, 杉木, 喜洋, 松本, 聡, Maekawa, Toru, Ikegami, Keisuke, Tadokoro, Tomoki, Sugiki, Yoshihiro, Matsumoto, Satoshi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.41-49
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- 件名結晶成長 重力効果 浮力対流 半導体 移行液相ゾーン法 微小重力 数値解析 熱伝導度 crystal growth...
弘田, 龍, 龍見, 雅美, 花上, 康宏, 木下, 恭一, Hirota, Ryu, Tatsumi, Masami, Hanaue, Yasuhiro, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.51-57
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- 件名In(sub x)Ga(sub 1-x)As InAs 移行液相ゾーン法 方向性凝固 温度プロファイル 結晶成長 微小重力 過冷却 ...
花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 木下, 恭一, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.13-17
全国の図書館
- 件名単結晶成長 移行液相ゾーン法 温度勾配 In(sub x)Ga(sub 1-x)As 半...
- 並列タイトル等(連結)移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶...
- 並列タイトル等移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶...
足立, 聡, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Yoda, Shinichi, Kinoshita, Kyoichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.65-84
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- 件名重力効果 移行液相ゾーン法 数値解析 対流 温度分布 In(sub x)Ga(sub ...
- 並列タイトル等(連結)種々の重力状態における移行液相ゾーン法のカートリッジの数値解析
- 並列タイトル等種々の重力状態における移行液相ゾーン法のカートリッジの数値解析
中村, 裕彦, 花上, 康宏, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Hanaue, Yasuhiro, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2001-12-25宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystalsp.19-40
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- 件名移行液相ゾーン法 定量的モデル解析 結晶成長 半導体 均質性 温度勾配 In...
- 並列タイトル等(連結)移行液相ゾーン法の定量的モデリング
- 並列タイトル等移行液相ゾーン法の定量的モデリング
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2001-12-25宇宙開発事業団技術報告 = NASDA Technical Memorandum
全国の図書館
- 件名In(sub x)Ga(sub 1-x)As 移行液相ゾーン法 単結晶成長 対流 微小重力 ラマン散乱 均質性 基板 定量...