Islam, M. R., Verma, P., 山田, 正良, 児玉, 茂夫, 花上, 康宏, 木下, 恭一, Yamada, Masayoshi, Kodama, Shigeo, Hanaue, Yasuhiro, Kinoshita, Kyoichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.61-71
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- 件名In(x)Ga(1-x)As 多結晶化 結晶成長 残余歪み Raman散乱 フォトルミネッセンス 多成分ゾーンメルティング polyc...