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Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions

Numerical analysis of crystal growth of an I[lc]nA[lc]s-G[lc]aA[lc]s binary semiconductor under microgravity conditions
デジタル文書・図像類
前川, 透, 杉木, 喜洋, 松本, 聡, Maekawa, Toru, Sugiki, Yoshihiro, Matsumoto, Satoshi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.19-28
全国の図書館
  • 件名... approximation crystal-solution interface

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2001): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program (2001): Effects of microgravity environment on growth related properties of semiconductor alloys (I[lc]nG[lc]aA[lc]s)-growth of homogeneous crystals
デジタル文書・図像類
宇宙開発事業団, National Space Development Agency of Japan宇宙開発事業団2002-12-27宇宙開発事業団技術報告 = NASDA Technical Memorandum
全国の図書館
  • 件名...h microgravity crystal-solution interface feasibility study one dimensi...

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