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Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―
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YAMAMOTO, Akio, AZUMA, Katsuhiko, YASUDA, Tomomi, HASHIMOTO, AkihiroThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.778-781
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  • 件名GaN photoelectrochemical etching detection of dislocations current density tree-like fea...

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