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High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates

High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates
デジタル文書・図像類
木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 宮田, 浩旭, 田中, 涼太, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Miyata, Hiroaki, Tanaka, Ryota, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2007-03-30宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-06-014E
全国の図書館
  • 件名...ロファイル 温度安定性 対流 traveling liquidus-zone method TLZ method indium gallium ars...

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
デジタル文書・図像類
木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.14-20
全国の図書館
  • 件名...crystal growth traveling liquidus-zone method crystallization arsenic compo...

Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method

Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method
デジタル文書・図像類
宮田, 浩旭, 緒方, 康行, 木下, 恭一, 足立, 聡, 依田, 真一, 鶴, 哲也, 村松, 祐治, Miyata, Hiroaki, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Tsuru, Tetsuya, Muramatsu, Yuji宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.7-13
全国の図書館
  • 件名...crystal growth traveling liquidus-zone method silicon compound liquidus cry...
  • 一般注記... research, the Traveling Liquidus-Zone method (TLZ method) which was invent...

Numerical investigation on two-dimensionality in the Traveling Liquidus-Zone method

Numerical investigation on two-dimensionality in the Traveling Liquidus-Zone method
デジタル文書・図像類
足立, 聡, 緒方, 康行, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.21-27
全国の図書館
  • 件名...crystal growth traveling liquidus-zone method numerical analysis arsenic co...

Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method

Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method
デジタル文書・図像類
足立, 聡, 緒方, 康行, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.28-32
全国の図書館
  • 件名...crystal growth traveling liquidus-zone method numerical analysis diffusion ...

Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals

Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals
デジタル文書・図像類
宇宙航空研究開発機構, Japan Aerospace Exploration Agency宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-04-022E
全国の図書館
  • 件名...crystal growth traveling liquidus-zone method silicon compound arsenic comp...

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