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IEEE transactions on electron devices

IEEE transactions on electron devices
紙記録メディア雑誌雑誌タイトル
Institute of Electrical and Electronics Engineers<Z53-F2>
国立国会図書館全国の図書館
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EPITAXIALLY-GROWN GAN JUNCTION FIELD EFFECT TRANSISTORS;IEEE TRANSACTION ON ELECTRON DEVICES (SAND ; SAND-99-1252J)

EPITAXIALLY-GROWN GAN JUNCTION FIELD EFFECT TRANSISTORS;IEEE TRANSACTION ON ELECTRON DEVICES (SAND ; SAND-99-1252J)
紙図書
SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES)Sandia National Laboratories(Sandia National Laboratories)1999.
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Nonadiabatic Effects on Beam-Quality Parameters for Frequency-Tunable Gyrotrons

Nonadiabatic Effects on Beam-Quality Parameters for Frequency-Tunable Gyrotrons
デジタル文書・図像類
Cheng-Hung, Tsai, Tsun-Hsu, Chang, Yuusuke, Yamaguchi, Toshitaka, IdeharaIEEE2019-12-16IEEE Transactions on Electron Devicesp.1-6
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Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
デジタル文書・図像類
Kuzuhara, Masaaki, Tokuda, HirokuniIEEE.2015-02IEEE Transactions on Electron Devices62 2p.405-413
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IRE Transactions on Electron Devices

IRE Transactions on Electron Devices
紙雑誌雑誌タイトル
Institute of Radio Engineers<Z53-F2>
国立国会図書館
  • 改題後IEEE transactions on electron devices
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Calculations of Fringing Fields of a Quadrupole Doublet

Calculations of Fringing Fields of a Quadrupole Doublet
デジタル文書・図像類
UEDA, Masahiro, NODA, Matu-tarowInstitute of Electrical and Electronics Engineers1973-07IEEE Transactions on Electron DevicesED-20 7p.662-663
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Ieee Transactions on Electron devices

Ieee Transactions on Electron devices
デジタル電子書籍・電子雑誌雑誌
IEEE
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