Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al₄C₃ (Special Issue : Recent Advances in Nitride Semiconductors)

Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al₄C₃

(Special Issue : Recent Advances in Nitride Semiconductors)

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Material Type: 記事
Title: Fabrication of C-Doped p-AlGaInN Light-Emitting Diodes by the Insertion of Al₄C₃
Author/Editor: Dohyung Kim
Heesub Lee
Kazuya Yamazumi 他
Series Title: Special Issue : Recent Advances in Nitride Semiconductors
Author Heading: Dohyung Kim
Heesub Lee
Kazuya Yamazumi
Periodical title: Japanese journal of applied physics : JJAP
No. or year of volume/issue: 52(8)(2):2013.8
Volume: 52
Issue: 8
Sequential issue number: 2
Pages: 08JG18-1-5
Publication date of volume/issue (W3CDTF): 2013-08
ISSN (Periodical Title): 0021-4922
ISSN-L (Periodical Title): 0021-4922
Publication (Periodical Title): Tokyo : The Japan Society of Applied Physics
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: ZM35
Target Audience: 一般
Holding library: 国立国会図書館
Call No.: Z53-A375
Data Provider (Database): 国立国会図書館 : 国立国会図書館雑誌記事索引
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 024786869
http://id.ndl.go.jp/bib/024786869
Bibliographic Record Category (NDL): 632