Characteristics of metal-oxide-semiconductor field-effect transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si stack structures formed by remote plasma technique
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- Material Type
- 記事
- Author/Editor
- Sanghyun WooHyungseok HongSeokhoon Kim 他
- Author Heading
- Periodical title
- Japanese journal of applied physics : JJAP
- No. or year of volume/issue
- 47(8) (1) 2008.8
- Volume
- 47
- Issue
- 8
- Other Volume
- 1
- Pages
- 6196～6199