Japanese journal of applied physics : JJAP47(8)(1);August 2008

• Material Type: 雑誌
• ISSN: 0021-4922
• ISSN-L: 0021-4922
• Title: Japanese journal of applied physics : JJAP
• Volume: 47(8)(1);August 2008
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : The Japan Society of Applied Physics
• Publication Date: 2008-08
• Publication Date (W3CDTF): 2008-08
• Year and volume of publication: v. 47, no. 1 (Jan. 2008)-
• Size: 30cm
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Note (General): Description based on the latest issue; Issued in 2 parts
• DOI: 10.11501/11226741; https://doi.org/10.11501/11226741
• Persistent ID (NDL): info:ndljp/pid/11226741; https://dl.ndl.go.jp/pid/11226741
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Producer: 国立国会図書館
• Production year (W3CDTF): 2019-03-15
• Date Accepted (W3CDTF): 2019-01-17T10:37:16+09:00
• Format (IMT): image/jp2
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Year and volume of holding: v. 47, no. 1 (Jan. 2008)-v. 52, no. 12 (Dec. 2013)
• Call No.: Z53-A375
• Original Material (JPNO): 01018065
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11227790; https://dl.ndl.go.jp/pid/11227790
• Replaces (Persistent ID (NDL)): info:ndljp/pid/11196685; https://dl.ndl.go.jp/pid/11196685
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

Table of Contents

CONTENTS/

Semiconductors//6191～

Non-stoichiometric SiₓN metal-oxide-semiconductor field-effect transistor for compact random number generator with 0.3Mbit／s generation rate/Mari Matsumoto ; Ryuji Ohba ; Shin-ichi Yasuda/6191～6195

Characteristics of metal-oxide-semiconductor field-effect transistors with HfO₂／SiO₂／Si and HfO₂／SiOₓN[y]／Si stack structures formed by remote plasma technique/Sanghyun Woo ; Hyungseok Hong ; Seokhoon Kim/6196～6199

Compact hot-electron induced oxide trapping charge and post-stress drain current modeling for buried-channel p-type metal-oxide-semiconductor field-effect-transistors/Chorng-Jye Sheu/6200～6204