Compact hot-electron induced oxide trapping charge and post-stress drain current modeling for buried-channel p-type metal-oxide-semiconductor field-effect-transistors

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Compact hot-electron induced oxide trapping charge and post-stress drain current modeling for buried-channel p-type metal-oxide-semiconductor field-effect-transistors

Call No. (NDL)
Z53-A375
Bibliographic ID of National Diet Library
9621528
Material type
記事
Author
Chorng-Jye Sheu
Publisher
Tokyo : The Japan Society of Applied Physics
Publication date
2008-08
Material Format
Digital
Journal name
Japanese journal of applied physics : JJAP 47(8) (1) 2008.8
Publication Page
p.6200~6204
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Digital

Material Type
記事
Author/Editor
Chorng-Jye Sheu
Author Heading
Periodical title
Japanese journal of applied physics : JJAP
No. or year of volume/issue
47(8) (1) 2008.8
Volume
47
Issue
8
Other Volume
1
Pages
6200~6204