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Sony Corporation Research Center Reports 12;1973

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Sony Corporation Research Center Reports12;1973

Call No. (NDL)
Z53-M448
Persistent ID (NDL)
info:ndljp/pid/11028197
Material type
雑誌
Author
-
Publisher
Sony Corp. Research Center
Publication date
[1973]
Material Format
Digital
Publication Frequency
-
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Notes on use

Holding issue:

8:1969 - 14:1975

Volume Range:

8:1969 - 14:1975

Note (General):

Description based on the latest issue

Related materials as well as pre- and post-revision versions

継続前誌: Sony Research Laboratory Scientific Reports

Table of Contents

Provided by:国立国会図書館デジタルコレクションLink to Help Page
  • CONTENTS/

  • PART 1 FULL PAPERS//~121

  • A New Method of Growing GaP Crystals for Light-Emitting Diodes Proc. IEEE, July 1973(also J. Denki Kagaku, Vol. 41, No. 7, pp560-564)/K. KANEKO. M. AYABE ; M. DOSEN ; K. MORIZANE ; S. USUI ; N. WATANABE/~890

  • Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc Japan. J. Appl. Phys., Vol. 12, No. 11, pp1732-1736/Kunio KANEKO ; Masashi DOSEN ; Naozo WATANABE/1732~1736

  • Technology for Monolithic High-Power Integrated Circuits Using Polycrystalline Si for Collector and Isolation Walls IEEE Trans. on Electron Devices, Vol. ED-20, No. 4, pp309-404/Isamu KABAYASHI/~404

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Digital

Material Type
雑誌
Volume
12;1973
Publication, Distribution, etc.
Publication Date
[1973]
Publication Date (W3CDTF)
1973
Year and volume of publication
8:1969 - 14:1975
Size
26 cm
ISSN (Periodical Title)
0388-0893
ISSN-L (Periodical Title)
0388-0893