Extended Abstracts of International Conference on Solid State Devices and Materials1994

• Material Type: 雑誌
• Title: Extended Abstracts of International Conference on Solid State Devices and Materials
• Volume: 1994
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : Japan Society of Applied Physics
• Publication Date: 1994-08
• Publication Date (W3CDTF): 1994-08
• Year and volume of publication: [ ]-22nd (1990) ; 1991-2008
• Size: 30 cm
• Alternative Title: Extended Abstracts of Conference on Solid State Devices and Materials
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: ZM35
• Note (General): Description based on the latest issue; Title: Extended Abstracts of Conference on Solid State Devices and Materials (- v.22)
• DOI: 10.11501/11019411; https://doi.org/10.11501/11019411
• Persistent ID (NDL): info:ndljp/pid/11019411; https://dl.ndl.go.jp/pid/11019411
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Producer: 国立国会図書館
• Production year (W3CDTF): 2018-03-09
• Date Accepted (W3CDTF): 2018-01-15T18:38:08+09:00
• Format (IMT): image/jp2
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Rights (production): 国立国会図書館／図書館送信参加館内公開
• Year and volume of holding: 18th (1986)- 22nd (1990) ; 1991-2008; Previous issues catalogued as monograph
• Call No.: Z63-B262
• Original Material (JPNO): 10040101
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11028911; https://dl.ndl.go.jp/pid/11028911
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

Table of Contents

CONTENTS//15～36

Symposium I-1: APCT'94 Epitaxial Growth//1～15

(1) Growth Dynamics of III-V Semiconductor Films (Invited)/B. A. Joyce/1～3

(2) Two Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source/A. Kikuchi ; H. Hoshi ; K. Kishino/4～6

(3) Plasma-Assisted MOCVD Growth of GaAs／GaN／GaAs Thin-Layer Structures by N-As Replacement Using N-Radicals/M. Sato/7～9