Sony Research Center Reports25;1986

• Material Type: 雑誌
• ISSN: 0388-0893
• ISSN-L: 0388-0893
• Title: Sony Research Center Reports
• Volume: 25;1986
• Publication, Distribution, etc.: Yokohama : Sony Corp. Research Center
• Publication Date: [1986]
• Publication Date (W3CDTF): 1986
• Year and volume of publication: 15:1976 - 25:1986
• Size: 26 cm
• Place of Publication (Country Code): JP
• Text Language Code: eng; jpn
• NDLC: ZN33
• Note (General): Description based on the latest issue
• DOI: 10.11501/11028210; https://doi.org/10.11501/11028210
• Persistent ID (NDL): info:ndljp/pid/11028210; https://dl.ndl.go.jp/pid/11028210
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Producer: 国立国会図書館
• Production year (W3CDTF): 2018-03-09
• Date Accepted (W3CDTF): 2018-01-15T18:38:14+09:00
• Format (IMT): image/jp2
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Year and volume of holding: 15:1976 - 25:1986
• Call No.: Z53-M448
• Original Material (JPNO): 10040687
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11028960; https://dl.ndl.go.jp/pid/11028960
• Replaces (Persistent ID (NDL)): info:ndljp/pid/11028936; https://dl.ndl.go.jp/pid/11028936
• Continues (Persistent ID (NDL)): info:ndljp/pid/11029054; https://dl.ndl.go.jp/pid/11029054
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

Table of Contents

Contents/

PART 1 Full Papers and Short Notes//～266

Compound Semiconductor Materials//1～32

Thermal Etching of GaAs by Hydrogen Under Arsenic Overpressure/A. Okubora ; J. Kasahara ; M. Arai ; N. Watanabe/1～4

MOCVD Growth of AlGaInP at Atmospheric Pressure Using Triethylmetals and Phosphine/M. Ikeda ; K. Nakano ; Y. Mori ; K. Kaneko ; N. Watanabe/5～10