Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAPPart. 1 33(2)(396);FEBRUARY 1994

• Material Type: 雑誌
• ISSN: 0021-4922
• ISSN-L: 0021-4922
• Title: Japanese journal of applied physics
• Volume: Part. 1; 33(2)(396);FEBRUARY 1994
• Part Title: Regular papers, brief communications & review papers : JJAP
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities
• Publication, Distribution, etc.: Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics
• Publication Date: 1994-02
• Publication Date (W3CDTF): 1994-02
• Year and volume of publication: v. 21, no. 1 (Jan. 1982)-v. 46, no. 12 (Dec. 2007)
• Size: 30 cm
• Alternative Title: Japanese journal of applied physics. Pt. 1, Regular papers, short notes; Japanese journal of applied physics. Pt. 1, Regular papers, short notes & review papers
• Place of Publication (Country Code): JP
• Text Language Code: eng; fre; ger
• NDLC: ZM35
• Note (General): Description based on the latest issue; Title varies slightly; 29 (11) =341; With: Suppl
• Note (Cumulative Index): 総目次・総索引あり
• DOI: 10.11501/11196150; https://doi.org/10.11501/11196150
• Persistent ID (NDL): info:ndljp/pid/11196150; https://dl.ndl.go.jp/pid/11196150
• Collection (particular): 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌; https://dl.ndl.go.jp/collections/A00002
• Producer: 国立国会図書館
• Production year (W3CDTF): 2019-03-15
• Date Accepted (W3CDTF): 2018-12-04T13:53:28+09:00
• Format (IMT): image/jp2
• Access Restrictions: 国立国会図書館内限定公開
• Service for the Digitized Contents Transmission Service: 図書館・個人送信対象
• Availability of remote photoduplication service: 可
• Year and volume of holding: v. 21, no. 1 (Jan. 1982)-v. 46, no. 12 (Dec. 2007)
• Call No.: Z53-A375
• Original Material (JPNO): 10054219
• Related Material (Persistent ID (NDL)): info:ndljp/pid/11399507; https://dl.ndl.go.jp/pid/11399507
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/11196685; https://dl.ndl.go.jp/pid/11196685
• Replaces (Persistent ID (NDL)): info:ndljp/pid/11196682; https://dl.ndl.go.jp/pid/11196682
• Continues (Persistent ID (NDL)): info:ndljp/pid/11227790; https://dl.ndl.go.jp/pid/11227790
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

Table of Contents

CONTENTS/

Semiconductors//943～

Effect of Surface Treatments after HF Etching on Oxidation of Si/Masatoshi EGAWA ; Hideaki IKOMA/943～

Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System/Yoshinori SAWADO ; Takeshi AKIYAMA ; Tomo UENO ; Koichi KAMISAKO ; Koichi KUROIWA ; Yasuo TARUI/950～

Si Epitaxy below 400℃ from Fluorinated Precursors SiF[n]H[m](n+m≤3) under In Situ Observation with Ellipsometry/Tetsuya AKASAKA ; Yuhzo ARAKI ; Isamu SHIMIZU/956～