Heteroepitaxial growth of GaAs on Si by MOCVD and its application to optoelectronic devices

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Material Type: 博士論文
Title: Heteroepitaxial growth of GaAs on Si by MOCVD and its application to optoelectronic devices
Author/Editor: 江川孝志 [著]
Author Heading: 江川, 孝志エガワ, タカシ
Alternative Title: MOCVD法を用いたSi上へのGaAsヘテロエピタキシャル成長および光電子デバイスへの応用 MOCVDホウオモチイタ Siジョウエノ GaAs ヘテロエピタキシャルセイチョウオヨビコウデンシデバイスエノオウヨウ
Degree grantor/type: 名古屋工業大学
Date Granted: 平成3年3月23日
Date Granted (W3CDTF): 1991
Dissertation Number: 甲第61号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
UT31
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-91-G14
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000239949
http://id.ndl.go.jp/bib/000000239949
Bibliographic Record Category (NDL): 213