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博士論文

Growth processes and fundamental properties of amorphous semiconductor superlattices of a-Ge:H/a-Genx & a-Si:H/a-Sinx

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Growth processes and fundamental properties of amorphous semiconductor superlattices of a-Ge:H/a-Genx & a-Si:H/a-Sinx

Call No. (NDL)
UT51-91-W73
Bibliographic ID of National Diet Library
000000247387
Persistent ID (NDL)
info:ndljp/pid/3087133
Material type
博士論文
Author
本間格 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京大学,工学博士
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博士論文

Table of Contents

Provided by:国立国会図書館デジタルコレクションLink to Help Page
  • PROLOGUE

    p1

  • ACKNOWLEDGEMENT

    p4

  • List of Publications

    p6

  • Contents

    p9

  • Chapter I.Introduction

    p12

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Paper Digital

Material Type
博士論文
Author/Editor
本間格 [著]
Author Heading
本間, 格 ホンマ, イタル ( 01218874 )Authorities
Alternative Title
アモルファス半導体超格子の作成と基礎物性 アモルファス ハンドウタイ チョウコウシ ノ サクセイ ト キソ ブッセイ
Degree grantor/type
東京大学
Date Granted
平成2年6月14日
Date Granted (W3CDTF)
1990
Dissertation Number
乙第9746号
Degree Type
工学博士