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博士論文

Growth of group-Ⅳ semiconductor heterostructures with controlled interfaces and observation of band-edge luminescence from strained Si[1-x]Ge[x]/Si quantum wells

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Growth of group-Ⅳ semiconductor heterostructures with controlled interfaces and observation of band-edge luminescence from strained Si[1-x]Ge[x]/Si quantum wells

Call No. (NDL)
UT51-94-P253
Bibliographic ID of National Diet Library
000000273765
Persistent ID (NDL)
info:ndljp/pid/3095772
Material type
博士論文
Author
深津晋 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
東京大学,博士 (工学)
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博士論文

Table of Contents

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  • Table of contents

    p3

  • Acknowledgments

    p2

  • Abstract

    p4

  • List of Figures

    p5

  • 1.Introduction

    p1

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Bibliographic Record

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Paper Digital

Material Type
博士論文
Author/Editor
深津晋 [著]
Author Heading
深津, 晋 フカツ, ススム ( 01111832 )Authorities
Alternative Title
Ⅳ属半導体ヘテロ構造の成長制御とSi[1-x]Ge[x]/Si歪量子井戸のバンド端ルミネセンス 4ゾク ハンドウタイ ヘテロ コウゾウ ノ セイチョウ セイギョ ト Si1-xGex/Si ヒズミ リョウシ イド ノ バンドタン ルミネセンス
Degree grantor/type
東京大学
Date Granted
平成4年10月15日
Date Granted (W3CDTF)
1992
Dissertation Number
乙第10914号
Degree Type
博士 (工学)