A luminescence study on stress-driven growth mode transition and formation of quantum nanostructures in indirect-gap strained Si/Ge

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A luminescence study on stress-driven growth mode transition and formation of quantum nanostructures in indirect-gap strained Si/Ge

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Material Type: 博士論文
Title: A luminescence study on stress-driven growth mode transition and formation of quantum nanostructures in indirect-gap strained Si/Ge
Author/Editor: 砂村潤 [著]
Author Heading: 砂村, 潤スナムラ, ヒロシ
Alternative Title: 間接遷移型半導体Si/Ge系における歪誘起成長様式遷移と量子ナノ構造形成のルミネセンス法による研究カンセツセンイガタハンドウタイ Si/Geケイニオケルヒズミユウキセイチョウヨウシキセンイトリョウシナノコウゾウケイセイノルミネセンスホウニヨルケンキュウ
Degree grantor/type: 東京大学
Date Granted: 平成9年3月28日
Date Granted (W3CDTF): 1997
Dissertation Number: 甲第12595号
Degree Type: 博士 (工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-98-Q467
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000000325287
http://id.ndl.go.jp/bib/000000325287
Bibliographic Record Category (NDL): 213