Jump to main content

博士論文

反応性イオンビームを用いた半導体光素子の作製

Icons representing 博士論文
The cover of this title could differ from library to library. Link to Help Page

Available with Digitized Contents Transmission Service

Find on the publisher's website

国立国会図書館デジタルコレクション

Available for viewing via the Digitized Contents Transmission Service for Individuals to official registered users of the NDL, who resides in Japan.

Become an official registered user >

Log in >

反応性イオンビームを用いた半導体光素子の作製

Call No. (NDL)
UT51-99-J186
Bibliographic ID of National Diet Library
000000335807
Persistent ID (NDL)
info:ndljp/pid/3150616
Material type
博士論文
Author
吉川隆士 [著]
Publisher
-
Publication date
-
Material Format
Paper・Digital
Capacity, size, etc.
-
Name of awarding university/degree
慶応義塾大学,博士(工学)
View All

Notes on use

Note (General)：

博士論文

Search by Bookstore

Search by Bookstore

Read this material in an accessible format.

View materials in accessible formats for people with print disabilities (1Type)

Table of Contents

Provided by：国立国会図書館デジタルコレクションLink to Help Page

  • 論文目録

  • [目次]

    p1

  • 第1章 序論

    p1

  • 1-1 本研究の背景

    p1

  • 1-2 本論文の構成

    p5

Search by Bookstore

Read in Disability Resources

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Paper Digital

Material Type
博士論文
Title
反応性イオンビームを用いた半導体光素子の作製
Title Transcription
ハンノウセイ イオン ビーム オ モチイタ ハンドウタイ ヒカリ ソシ ノ サクセイ
Author/Editor
吉川隆士 [著]
Author Heading
吉川, 隆士 ヨシカワ, タカシ
Degree grantor/type
慶応義塾大学
Date Granted
平成11年2月5日
Date Granted (W3CDTF)
1999
Dissertation Number
乙第3237号
Degree Type
博士(工学)