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A. General
1. Crossing of basic research of crystal defects and silicon material technology/ 1
B. Quality and Technology Required for the Wafers in the Coming Generation
2. Wafer quality requirements from the next generation processes and devices/ 19
3. Device physics and technology of strained-Si MOSFETs/ 26
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Bibliographic Record
You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.
- Material Type
- 図書
- Volume
- 2003
- Author/Editor
- edited by H. Yamada-Kaneta, K. Sumino
- Author Heading
- 角野, 浩二, 1931- スミノ, コウジ, 1931- ( 00332219 )Authorities金田, 寛 カネタ, ヒロシ ( 00939685 )Authorities
- Publication, Distribution, etc.
- Publication Date
- c2003
- Publication Date (W3CDTF)
- 2003
- Extent
- 340 p.
- Size
- 30 cm