2005 international conference on simulation of semiconductor processes and devices : SISPAD 2005 : September 1-3, 2005 Komaba Eminence, Tokyo, Japan

• Material Type: 図書
• ISBN: 4-9902762-0-5
• Title: 2005 international conference on simulation of semiconductor processes and devices : SISPAD 2005 : September 1-3, 2005 Komaba Eminence, Tokyo, Japan
• Author/Editor: co-sponsored by Japan Society of Applied Physics, IEEE Electron Devices Society
• Author Heading: 応用物理学会 オウヨウ ブツリ ガッカイ ( 00281497 )Authorities; IEEE Electron Devices Society ( 00927239 )Authorities
• Publication, Distribution, etc.: [Tokyo] : [Japan Society of Applied Physics]
• Publication Date: c2005
• Publication Date (W3CDTF): 2005
• Extent: 340 p.
• Size: 30 cm
• Place of Publication (Country Code): JP
• Text Language Code: eng
• NDLC: M18
• Target Audience: 一般
• Note (General): "JSAP cat. no. AP051227, IEEE cat. no. 05TH8826."
• Holding library: 国立国会図書館
• Call No.: M18-B488
• Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書; https://ndlsearch.ndl.go.jp
• Bibliographic ID (NDL): 000007913134; http://id.ndl.go.jp/bib/000007913134
• National Bibliography No. (JPNO): 20916606
• Cataloging Rule: Nippon Cataloguing Rules 1987 Revised Edition
• Bibliographic Record Category (NDL): 113

Table of Contents

TECHNICAL PROGRAM AND CONTENTS

Thursday, September 1

Session 1 Plenary Session (Diamond Room)

9:00 Opening and Welcome Remarks

1-1 9:10 Plenary : MOSFET Modeling beyond 100nm Technology : Challenges and Perspectives/ 1