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図書

シリコン貫通電極TSV : 半導体の高機能化技術

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シリコン貫通電極TSV : 半導体の高機能化技術

Call No. (NDL)
ND371-J178
Bibliographic ID of National Diet Library
000011185112
Material type
図書
Author
傳田精一 著
Publisher
東京電機大学出版局
Publication date
2011.4
Material Format
Paper
Capacity, size, etc.
237p ; 21cm
NDC
549.8
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Detailed bibliographic record

Summary, etc.:

TSVとは,半導体を三次元に実装する際に用いる技術であり,半導体の高集積化,多量データ通信,省電力などが可能になる。(Provided by: 出版情報登録センター(JPRO))

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Table of Contents

Provided by:出版情報登録センター(JPRO)Link to Help Page
  • 第1章 シリコン貫通電極の重要性

  • 1 LSIは2次元から3次元へ

  • 2 3次元構造のシリコンデバイス

  • 3 TSVデバイスの将来予想

  • 4 世界のTSV研究開発

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Kanto

Tokai/Hokuriku

  • 福井県立図書館

    Paper
    Call No.:
    549.8/テンタ
    Book Registration Number:
    1015748872
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    Paper
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Paper Digital

Material Type
図書
ISBN
978-4-501-32800-9
Title Transcription
シリコン カンツウ デンキョク TSV : ハンドウタイ ノ コウキノウカ ギジュツ
Author/Editor
傳田精一 著
Author Heading
伝田, 精一, 1931- デンダ, セイイチ, 1931- ( 00004752 )Authorities
Publication, Distribution, etc.
Publication Date
2011.4
Publication Date (W3CDTF)
2011
Extent
237p