B24-071 Low Dielectric-constant (k<2.5) Silica with Nano-scale Pores for Copper Interconnects

• Material Type: 記事
• Title: B24-071 Low Dielectric-constant (k<2.5) Silica with Nano-scale Pores for Copper Interconnects
• Author/Editor: Kobayashi,Nobuyoshi
• Publication, Distribution, etc.: 日本 : 日本機械学会
• Publication Date: 2003-11-30
• Publication Date (W3CDTF): 2003-11-30
• Periodical title: International Symposium on Micro-Mechanical Engineering : ISMME
• No. or year of volume/issue: 2003
• Volume: 2003
• Pages: 423-426
• Text Language Code: ENG
• Subject Heading: carbon-doped silica; modulus; pore; CMP; Cu
• Note (General): 著者所属: Semiconductor Leading Edge Technologies, Inc.
• Persistent ID (NDL): info:ndljp/pid/10351120; https://dl.ndl.go.jp/pid/10351120
• Collection: 障害者向け資料
• Collection (Materials For Handicapped People:1): テキストデータ
• Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会; https://dl.ndl.go.jp/collections/B00043
• Acquisition Basis: NII-ELS
• Available (W3CDTF): 2017-06-22
• Date Accepted (W3CDTF): 2017-05-19
• Date Captured (W3CDTF): 2017-05-19
• Format (IMT): application/pdf
• Access Restrictions: インターネット公開
• Availability of remote photoduplication service: 不可
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10356269; https://dl.ndl.go.jp/pid/10356269
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

• Summary, etc.: The mechanical properties of cabon-doped silica (MSQ) with various content of nano-scale pores are systematically investigated for Cu interconnect app...