博士論文

Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors

Icons representing 博士論文
The cover of this title could differ from library to library. Link to Help Page

Available in National Diet Library

Find on the publisher's website

国立国会図書館デジタルコレクション

Digital data available（高知工科大学）

Check on the publisher's website

Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors

Persistent ID (NDL)
info:ndljp/pid/10370237
Material type
博士論文
Author
JIANG, Jingxin
Publisher
高知工科大学
Publication date
2015-03
Material Format
Digital
Capacity, size, etc.
-
Name of awarding university/degree
高知工科大学,博士（工学）
View All

Notes on use at the National Diet Library

Notes on use

Note (General)：

identifier:高知工科大学, 博士論文.

Search by Bookstore

Search by Bookstore

Read this material in an accessible format.

View materials in accessible formats for people with print disabilities (1Type)

Table of Contents

  • 2019-05-06 再収集

  • 2019-05-06 再収集

  • 2019-05-06 再収集

Search by Bookstore

Read in Disability Resources

Bibliographic Record

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Digital

Material Type
博士論文
Title
Study on density of states in In-X-Zn-O (X=Sn, Ga) semiconductors and defect passivation methods for highly reliable thin-film transistors
Author/Editor
JIANG, Jingxin
Publication, Distribution, etc.
高知工科大学
Publication Date
2015-03
Publication Date (W3CDTF)
2015-03
Alternative Title
n-Ga-Zn-O酸化物半導体の欠陥準位が電気特性に及ぼす影響と欠陥不活性化プロセスによる薄膜トランジスタの高信頼性化に関する研究
Contributor
古田　守
Degree grantor/type
高知工科大学
Date Granted
2015-03-20