Reactive Ion Etching Characteristics of Permalloy Thin Films

• Material Type: 記事
• Title: Reactive Ion Etching Characteristics of Permalloy Thin Films
• Author/Editor: Kim,S. D.; Lee,J. J.; Lim,S. H.; Kim,H. J.
• Publication, Distribution, etc.: 日本 : 日本応用磁気学会
• Publication Date: 1999-01-20
• Publication Date (W3CDTF): 1999-01-20
• Periodical title: 日本応用磁気学会誌
• No. or year of volume/issue: 23(1-2)
• Volume: 23(1-2)
• Pages: 252-254
• Text Language Code: ENG
• Subject Heading: reactive ion etching; permalloy thin films; etching rate; etching damage; coercivity
• Note (General): 著者所属: Dept. of Metallurgical Engineering, Seoul National University; 著者所属: Thin Film Technology Research Center, Korea Institute of Science and Technology
• Persistent ID (NDL): info:ndljp/pid/10464247; https://dl.ndl.go.jp/pid/10464247
• Collection: 障害者向け資料
• Collection (Materials For Handicapped People:1): テキストデータ
• Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会; https://dl.ndl.go.jp/collections/B00043
• Acquisition Basis: NII-ELS
• Available (W3CDTF): 2017-08-23
• Date Accepted (W3CDTF): 2017-08-15
• Date Captured (W3CDTF): 2017-08-15
• Format (IMT): application/pdf
• Access Restrictions: インターネット公開
• Availability of remote photoduplication service: 不可
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10389056; https://dl.ndl.go.jp/pid/10389056
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

• Summary, etc.: Permalloy thin film were reactive ion etched using CO and NH_3 gases. The dependence of etching rate on various etching conditions (e.g. gas flow rate...