ウルツ鉱型(Ga,Mn)N膜の成長と物性

Persistent ID (NDL): info:ndljp/pid/10466072

Material type: 記事

Author: 園田,早紀

Publisher: 日本応用磁気学会

Publication date: 2003-01-01

Material Format: Digital

Journal name: 日本応用磁気学会誌 27(1)

Publication Page: p.28-33

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Note (General)：: 著者所属: (株)アルバックAffiliation: ULVAC, Inc.

Detailed bibliographic record

Summary, etc.：: GaN, one of the best-known wide-band-gap semiconductors, is a promising material for optical and electronic devices. In the field of spintronics, wide...

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Digital

Material Type: 記事
Title: ウルツ鉱型(Ga,Mn)N膜の成長と物性
Author/Editor: 園田,早紀
Publication, Distribution, etc.: 日本 : 日本応用磁気学会
Publication Date: 2003-01-01
Publication Date (W3CDTF): 2003-01-01
Alternative Title: Properties of Wurtzite (Ga, Mn)N
Periodical title: 日本応用磁気学会誌
No. or year of volume/issue: 27(1)
Volume: 27(1)
Pages: 28-33
Text Language Code: JPN
Alias of Author: Sonoda,S.
Subject Heading: GaN
Mn
diluted magnetic semiconductor
ferromagnet
ammonia
molecular beam epitaxy
Note (General): 著者所属: (株)アルバック
Affiliation: ULVAC, Inc.
Persistent ID (NDL): info:ndljp/pid/10466072
https://dl.ndl.go.jp/pid/10466072
Collection: 障害者向け資料
Collection (Materials For Handicapped People:1): テキストデータ
Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会
https://dl.ndl.go.jp/collections/B00043
Acquisition Basis: NII-ELS
Available (W3CDTF): 2017-08-23
Date Accepted (W3CDTF): 2017-08-15
Date Captured (W3CDTF): 2017-08-15
Format (IMT): application/pdf
Access Restrictions: インターネット公開
Availability of remote photoduplication service: 不可
Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10389107
https://dl.ndl.go.jp/pid/10389107
Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション
https://dl.ndl.go.jp