Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide

• Material Type: 記事
• Title: Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide
• Title Transcription: Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide
• Author/Editor: Wakiya,N.; Wada,H.; Shimizu,K.; Mizukami,S.; Machi,M.; Mizutani,N.; Shinozaki,K.
• Publication, Distribution, etc.: 日本 : 日本応用磁気学会
• Publication Date: 2006-03-01
• Publication Date (W3CDTF): 2006-03-01
• Periodical title: 日本応用磁気学会誌
• No. or year of volume/issue: 30(2)
• Volume: 30(2)
• Pages: 61-64
• Text Language Code: ENG
• Subject Heading: metal-oxide-semiconductor field-effect transistor; modification of drain current; ferrite thin film; fabrication process; epitaxial growth; novel magnetic recording
• Note (General): 著者所属: Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology
• Persistent ID (NDL): info:ndljp/pid/10467300; https://dl.ndl.go.jp/pid/10467300
• Collection: 障害者向け資料
• Collection (Materials For Handicapped People:1): テキストデータ
• Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会; https://dl.ndl.go.jp/collections/B00043
• Acquisition Basis: NII-ELS
• Available (W3CDTF): 2017-08-23
• Date Accepted (W3CDTF): 2017-08-15
• Date Captured (W3CDTF): 2017-08-15
• Format (IMT): application/pdf
• Access Restrictions: インターネット公開
• Availability of remote photoduplication service: 不可
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10389144; https://dl.ndl.go.jp/pid/10389144
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

• Summary, etc.: (Mn_<0.24>Zn_<0.09>Fe_<0.67>)Fe_2O_4 (MZF) thin films were grown on Si substrates without and with MOSFETs by pulsed laser deposition (PLD). The depos...