Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement : Etching and Deposition Technology

• Material Type: 記事
• Title: Study on Reaction Mechanism of Aluminum Selective Chemical Vapor Deposition with In-situ XPS Measurement : Etching and Deposition Technology
• Author/Editor: KAWAMOTO,Hideaki; SAKAUE,Hiroyuki; TAKEHIRO,Shinobu; HORIIKE,Yasuhiro
• Publication, Distribution, etc.: 日本 : Japanese Journal of Applied Physics
• Publication Date: 1991-01-31
• Publication Date (W3CDTF): 1991-01-31
• Periodical title: JJAP series
• No. or year of volume/issue: 4
• Volume: 4
• Pages: 218-222
• Text Language Code: ENG
• Subject Heading: aluminum; CVD; reaction mechanism; in-situ XPS; hydrogen termination
• Note (General): 著者所属: Department of Electrical engineering, Hiroshima University
• Persistent ID (NDL): info:ndljp/pid/10472332; https://dl.ndl.go.jp/pid/10472332
• Collection: 障害者向け資料
• Collection (Materials For Handicapped People:1): テキストデータ
• Collection (particular): 国立国会図書館デジタルコレクション > 電子書籍・電子雑誌 > 学術機関 > 学協会; https://dl.ndl.go.jp/collections/B00043
• Acquisition Basis: NII-ELS
• Available (W3CDTF): 2017-08-23
• Date Accepted (W3CDTF): 2017-08-15
• Date Captured (W3CDTF): 2017-08-15
• Format (IMT): application/pdf
• Access Restrictions: インターネット公開
• Availability of remote photoduplication service: 不可
• Periodical Title (Persistent ID (NDL)): info:ndljp/pid/10389309; https://dl.ndl.go.jp/pid/10389309
• Data Provider (Database): 国立国会図書館 : 国立国会図書館デジタルコレクション; https://dl.ndl.go.jp

• Summary, etc.: Aluminum (Al) films have been deposited selectively on Si at a substrate temperature from 270 to 330℃ under 1×10^<-3> Torr employing dimethylaluminum ...